异(yi)(yi)质(zhi)(zhi)结(jie)(jie)电(dian)(dian)池HJT是HeterojunctionTechnology的缩写，是一种N型单晶(jing)双(shuang)面电(dian)(dian)池，具有(you)(you)工(gong)艺简单、发电(dian)(dian)量高、度电(dian)(dian)成(cheng)(cheng)本低(di)的优势。异(yi)(yi)质(zhi)(zhi)结(jie)(jie)太阳能(neng)电(dian)(dian)池使用(yong)(yong)晶(jing)体硅(gui)(gui)片进行载流子传(chuan)输和吸收，并使用(yong)(yong)非晶(jing)/或微晶(jing)薄硅(gui)(gui)层(ceng)进行钝(dun)化和结(jie)(jie)的形成(cheng)(cheng)。顶(ding)部电(dian)(dian)极由(you)透明导电(dian)(dian)氧化物(wu)（TCO）层(ceng)和金属网格组成(cheng)(cheng)。异(yi)(yi)质(zhi)(zhi)结(jie)(jie)硅(gui)(gui)太阳能(neng)电(dian)(dian)池已经吸引了很(hen)多人的注意，因为它们可以达到(dao)很(hen)高的转换效(xiao)率，可达26.3%，由(you)隆基团(tuan)队(dui)对HJT极限效(xiao)率进行更新为28.5%，同时使用(yong)(yong)低(di)温度加工(gong)，通常整个(ge)过程低(di)于200℃。低(di)加工(gong)温度允许处(chu)理厚度小于100微米的硅(gui)(gui)晶(jing)圆，同时保(bao)持高产量。光伏(fu)异(yi)(yi)质(zhi)(zhi)结(jie)(jie)在建筑(zhu)、农业、交通等领(ling)域的广(guang)泛应用(yong)(yong)，为绿色能(neng)源(yuan)的发展提(ti)供了有(you)(you)力支持。杭州(zhou)单晶(jing)硅(gui)(gui)异(yi)(yi)质(zhi)(zhi)结(jie)(jie)设备厂家

异质(zhi)结(jie)电(dian)(dian)(dian)(dian)(dian)(dian)池技(ji)术路(lu)线，发电(dian)(dian)(dian)(dian)(dian)(dian)量(liang)高(gao)(gao)：低(di)温(wen)度(du)(du)意味着在(zai)组件高(gao)(gao)温(wen)运行环(huan)(huan)境中(zhong)，HJT电(dian)(dian)(dian)(dian)(dian)(dian)池具有相(xiang)对(dui)较高(gao)(gao)的(de)(de)(de)(de)(de)发电(dian)(dian)(dian)(dian)(dian)(dian)性能(neng)(neng)，从而(er)(er)实(shi)(shi)现发电(dian)(dian)(dian)(dian)(dian)(dian)量(liang)增益、降低(di)系统的(de)(de)(de)(de)(de)度(du)(du)电(dian)(dian)(dian)(dian)(dian)(dian)成本；若考虑电(dian)(dian)(dian)(dian)(dian)(dian)池工(gong)作温(wen)度(du)(du)超出(chu)(chu)环(huan)(huan)境温(wen)度(du)(du)10-40℃,而(er)(er)全年平均环(huan)(huan)境温(wen)度(du)(du)相(xiang)比实(shi)(shi)验室标准工(gong)况低(di)5-10℃，HJT电(dian)(dian)(dian)(dian)(dian)(dian)池每W发电(dian)(dian)(dian)(dian)(dian)(dian)量(liang)高(gao)(gao)出(chu)(chu)双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)PERC电(dian)(dian)(dian)(dian)(dian)(dian)池约(yue)(yue)0.6%-3.9%。优势(shi)五：双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)率高(gao)(gao)HJT正反面(mian)(mian)(mian)(mian)(mian)(mian)结(jie)构(gou)对(dui)称，而(er)(er)且TCO薄膜(mo)是透光的(de)(de)(de)(de)(de)，天然(ran)就是双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)电(dian)(dian)(dian)(dian)(dian)(dian)池；HJT的(de)(de)(de)(de)(de)双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)率能(neng)(neng)达到90%以(yi)上(能(neng)(neng)达到98%)，双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)PERC的(de)(de)(de)(de)(de)双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)率约(yue)(yue)为75%+；据solarzoom测算，考虑10%-20%的(de)(de)(de)(de)(de)背面(mian)(mian)(mian)(mian)(mian)(mian)辐(fu)(fu)照(zhao)及电(dian)(dian)(dian)(dian)(dian)(dian)池片双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)率的(de)(de)(de)(de)(de)差异，HJT电(dian)(dian)(dian)(dian)(dian)(dian)池单(dan)瓦发电(dian)(dian)(dian)(dian)(dian)(dian)量(liang)高(gao)(gao)出(chu)(chu)双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)PERC电(dian)(dian)(dian)(dian)(dian)(dian)池约(yue)(yue)2%-4%。优势(shi)六：弱光效应(ying)HJT电(dian)(dian)(dian)(dian)(dian)(dian)池采用(yong)(yong)N型单(dan)晶硅片，而(er)(er)PERC电(dian)(dian)(dian)(dian)(dian)(dian)池采用(yong)(yong)P型单(dan)晶硅片在(zai)600W/m以(yi)下的(de)(de)(de)(de)(de)辐(fu)(fu)照(zhao)强(qiang)度(du)(du)；N型相(xiang)比P型的(de)(de)(de)(de)(de)发电(dian)(dian)(dian)(dian)(dian)(dian)表现高(gao)(gao)出(chu)(chu)1%-2%左右，HJT电(dian)(dian)(dian)(dian)(dian)(dian)池因弱光效应(ying)而(er)(er)在(zai)每W发电(dian)(dian)(dian)(dian)(dian)(dian)量(liang)上高(gao)(gao)出(chu)(chu)双(shuang)面(mian)(mian)(mian)(mian)(mian)(mian)PERC电(dian)(dian)(dian)(dian)(dian)(dian)池约(yue)(yue)0.5-1.0%左右。广州高(gao)(gao)效异质(zhi)结(jie)装备光伏(fu)异质(zhi)结(jie)技(ji)术的(de)(de)(de)(de)(de)广泛(fan)应(ying)用(yong)(yong)能(neng)(neng)够推动光伏(fu)产(chan)业的(de)(de)(de)(de)(de)创新发展，促进(jin)科技(ji)进(jin)步和经济增长。

异质(zhi)结(jie)电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)（HJT电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)）的(de)(de)(de)(de)(de)(de)(de)(de)特点和优(you)势1、无(wu)PID现(xian)象(xiang)由于电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)上(shang)表(biao)面为(wei)TCO，电(dian)(dian)(dian)(dian)荷不会在电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)表(biao)面的(de)(de)(de)(de)(de)(de)(de)(de)TCO上(shang)产生(sheng)极化现(xian)象(xiang)，无(wu)PID现(xian)象(xiang)。同(tong)时实(shi)测数(shu)(shu)据也证实(shi)了这(zhei)一(yi)点。异质(zhi)结(jie)太(tai)阳能电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)技术应用与前景2、低(di)温(wen)制(zhi)(zhi)造工艺(yi)HJT电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)所有制(zhi)(zhi)程(cheng)的(de)(de)(de)(de)(de)(de)(de)(de)加(jia)工温(wen)度均低(di)于250，避免了生(sheng)产效率低(di)而成本高(gao)(gao)(gao)的(de)(de)(de)(de)(de)(de)(de)(de)高(gao)(gao)(gao)温(wen)扩散制(zhi)(zhi)结(jie)的(de)(de)(de)(de)(de)(de)(de)(de)过程(cheng)，而且低(di)温(wen)工艺(yi)使得a-Si薄膜的(de)(de)(de)(de)(de)(de)(de)(de)光学(xue)带隙、沉积速(su)率、吸收系数(shu)(shu)以(yi)及氢(qing)含量得到较精确(que)的(de)(de)(de)(de)(de)(de)(de)(de)控制(zhi)(zhi)，也可(ke)(ke)避免因高(gao)(gao)(gao)温(wen)导(dao)致的(de)(de)(de)(de)(de)(de)(de)(de)热应力等不良影响。3、高(gao)(gao)(gao)效率HJT电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)一(yi)直在刷(shua)新着量产的(de)(de)(de)(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)转换(huan)效率的(de)(de)(de)(de)(de)(de)(de)(de)世界(jie)纪录。HJT电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)效率比P型单晶(jing)硅(gui)(gui)电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)高(gao)(gao)(gao)1-2%，而且之间的(de)(de)(de)(de)(de)(de)(de)(de)差异在慢慢增大。4、高(gao)(gao)(gao)光照稳定性异质(zhi)结(jie)太(tai)阳能电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)技术应用与前景在HJT太(tai)阳能电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)中不会出现(xian)非晶(jing)硅(gui)(gui)太(tai)阳能电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)中常见的(de)(de)(de)(de)(de)(de)(de)(de)Staebler-Wronski效应。同(tong)时HJT电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)采用的(de)(de)(de)(de)(de)(de)(de)(de)N型硅(gui)(gui)片(pian)，掺(chan)杂(za)剂为(wei)磷，几(ji)乎无(wu)光致衰减现(xian)象(xiang)。5、可(ke)(ke)向薄型化发展HJT电(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)制(zhi)(zhi)程(cheng)温(wen)度低(di)，上(shang)下表(biao)面结(jie)构对称(cheng)，无(wu)机械应力产生(sheng)，可(ke)(ke)以(yi)顺利(li)实(shi)现(xian)薄型化；另(ling)外经研究，对于少(shao)子寿命(ming)较高(gao)(gao)(gao)（SRV<100cm/s）的(de)(de)(de)(de)(de)(de)(de)(de)N型硅(gui)(gui)基(ji)底，片(pian)子越薄可(ke)(ke)以(yi)得到越高(gao)(gao)(gao)的(de)(de)(de)(de)(de)(de)(de)(de)开路电(dian)(dian)(dian)(dian)压。

光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)是太(tai)(tai)(tai)阳能电(dian)池(chi)的(de)主要(yao)组成部分，其(qi)应用(yong)前(qian)景非(fei)常广(guang)阔(kuo)。随着全(quan)球对清(qing)(qing)洁能源的(de)需求不断增加，太(tai)(tai)(tai)阳能行(xing)业(ye)(ye)(ye)的(de)发(fa)展(zhan)前(qian)景也越(yue)来越(yue)广(guang)阔(kuo)。光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)具有(you)高效(xiao)、环保、可(ke)(ke)再生等(deng)(deng)特点，可(ke)(ke)以(yi)(yi)广(guang)泛应用(yong)于家(jia)庭、工业(ye)(ye)(ye)、农业(ye)(ye)(ye)等(deng)(deng)领域(yu)(yu)。在(zai)家(jia)庭领域(yu)(yu)，光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)可(ke)(ke)以(yi)(yi)用(yong)于太(tai)(tai)(tai)阳能发(fa)电(dian)系(xi)统(tong)(tong)，为(wei)家(jia)庭提(ti)供(gong)清(qing)(qing)洁、稳定的(de)电(dian)力(li)供(gong)应。在(zai)工业(ye)(ye)(ye)领域(yu)(yu)，光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)可(ke)(ke)以(yi)(yi)用(yong)于太(tai)(tai)(tai)阳能电(dian)站，为(wei)企业(ye)(ye)(ye)提(ti)供(gong)大规模的(de)清(qing)(qing)洁能源。在(zai)农业(ye)(ye)(ye)领域(yu)(yu)，光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)可(ke)(ke)以(yi)(yi)用(yong)于太(tai)(tai)(tai)阳能灌(guan)(guan)溉系(xi)统(tong)(tong)，为(wei)农民(min)提(ti)供(gong)便捷、高效(xiao)的(de)灌(guan)(guan)溉服务。此外，光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)还可(ke)(ke)以(yi)(yi)应用(yong)于交通(tong)、通(tong)信、航空等(deng)(deng)领域(yu)(yu)，为(wei)这些领域(yu)(yu)提(ti)供(gong)清(qing)(qing)洁、高效(xiao)的(de)能源供(gong)应。因此，光(guang)伏(fu)(fu)异(yi)(yi)质(zhi)(zhi)结(jie)在(zai)太(tai)(tai)(tai)阳能行(xing)业(ye)(ye)(ye)的(de)应用(yong)前(qian)景非(fei)常广(guang)阔(kuo)，具有(you)非(fei)常大的(de)发(fa)展(zhan)潜(qian)力(li)。零界高效(xiao)异(yi)(yi)质(zhi)(zhi)结(jie)电(dian)池(chi)整线装备，可(ke)(ke)实现更低的(de)度电(dian)成本(ben)及(ji)更好的(de)长期(qi)可(ke)(ke)靠性(xing)。

太阳(yang)(yang)能(neng)(neng)异(yi)质结(jie)的(de)(de)(de)(de)(de)制(zhi)造(zao)过(guo)(guo)程(cheng)是(shi)一个(ge)(ge)复(fu)杂(za)的(de)(de)(de)(de)(de)工(gong)艺(yi)过(guo)(guo)程(cheng)，需(xu)(xu)(xu)要多个(ge)(ge)步(bu)(bu)骤来完(wan)成。首(shou)先，需(xu)(xu)(xu)要准(zhun)备(bei)好基(ji)(ji)板，通(tong)常(chang)使用(yong)的(de)(de)(de)(de)(de)是(shi)硅(gui)基(ji)(ji)板。然(ran)后，在(zai)(zai)基(ji)(ji)板上涂覆一层氧(yang)(yang)(yang)化(hua)硅(gui)，这(zhei)一步(bu)(bu)是(shi)为(wei)了(le)保护基(ji)(ji)板不受损伤。接(jie)着，在(zai)(zai)氧(yang)(yang)(yang)化(hua)硅(gui)上涂覆一层掺杂(za)剂(ji)，通(tong)常(chang)使用(yong)的(de)(de)(de)(de)(de)是(shi)磷或(huo)硼，这(zhei)一步(bu)(bu)是(shi)为(wei)了(le)形成p型或(huo)n型半导体。然(ran)后，将(jiang)(jiang)掺杂(za)剂(ji)加热，使其扩(kuo)散(san)到基(ji)(ji)板中(zhong)，形成p-n结(jie)。接(jie)下来，需(xu)(xu)(xu)要在(zai)(zai)p-n结(jie)上涂覆一层透明导电膜，通(tong)常(chang)使用(yong)的(de)(de)(de)(de)(de)是(shi)氧(yang)(yang)(yang)化(hua)锌或(huo)氧(yang)(yang)(yang)化(hua)铟锡(xi)。除此之外，将(jiang)(jiang)太阳(yang)(yang)能(neng)(neng)电池(chi)(chi)片(pian)切割成合适的(de)(de)(de)(de)(de)大(da)小，然(ran)后进(jin)行(xing)测(ce)(ce)试和(he)(he)包装。整个(ge)(ge)制(zhi)造(zao)过(guo)(guo)程(cheng)需(xu)(xu)(xu)要严格的(de)(de)(de)(de)(de)控制(zhi)温(wen)度、时间和(he)(he)化(hua)学(xue)物(wu)质的(de)(de)(de)(de)(de)浓(nong)度等因素，以确保太阳(yang)(yang)能(neng)(neng)电池(chi)(chi)的(de)(de)(de)(de)(de)性能(neng)(neng)和(he)(he)稳定性。此外，制(zhi)造(zao)过(guo)(guo)程(cheng)中(zhong)还(hai)需(xu)(xu)(xu)要进(jin)行(xing)多次质量(liang)检测(ce)(ce)和(he)(he)测(ce)(ce)试，以确保太阳(yang)(yang)能(neng)(neng)电池(chi)(chi)的(de)(de)(de)(de)(de)质量(liang)符(fu)合标(biao)准(zhun)。太阳(yang)(yang)能(neng)(neng)异(yi)质结(jie)的(de)(de)(de)(de)(de)制(zhi)造(zao)过(guo)(guo)程(cheng)是(shi)一个(ge)(ge)高技术含量(liang)的(de)(de)(de)(de)(de)工(gong)艺(yi)过(guo)(guo)程(cheng)，需(xu)(xu)(xu)要专业(ye)的(de)(de)(de)(de)(de)技术人员和(he)(he)设(she)备(bei)来完(wan)成。光伏异(yi)质结(jie)作为(wei)一种(zhong)重要的(de)(de)(de)(de)(de)可(ke)再生(sheng)能(neng)(neng)源技术，将(jiang)(jiang)继续为(wei)推(tui)动全球(qiu)能(neng)(neng)源转型和(he)(he)可(ke)持续发展做(zuo)出积极贡献。浙江0bb异(yi)质结(jie)吸杂(za)设(she)备(bei)

异质(zhi)结(jie)(jie)电(dian)池(chi)主工艺(yi)之一：制绒(rong)清洗设(she)备。杭州单晶硅(gui)异质(zhi)结(jie)(jie)设(she)备厂家

高(gao)效异(yi)(yi)质(zhi)结(jie)电(dian)(dian)(dian)(dian)(dian)池整线解决(jue)方(fang)案，TCO的(de)(de)(de)(de)作用(yong)：在形成a-Si:H/c-Si异(yi)(yi)质(zhi)结(jie)后(hou)，电(dian)(dian)(dian)(dian)(dian)池被用(yong)一个~80纳(na)米的(de)(de)(de)(de)透明导(dao)电(dian)(dian)(dian)(dian)(dian)氧化物(wu)(wu)(wu)接触。~80纳(na)米薄(bo)的(de)(de)(de)(de)透明导(dao)电(dian)(dian)(dian)(dian)(dian)氧化物(wu)(wu)(wu)（TCO）层和前面(mian)的(de)(de)(de)(de)金属(shu)网格。透明导(dao)电(dian)(dian)(dian)(dian)(dian)氧化物(wu)(wu)(wu)通(tong)常(chang)是掺(chan)有(you)Sn的(de)(de)(de)(de)InO（ITO）或(huo)掺(chan)有(you)Al的(de)(de)(de)(de)ZnO。通(tong)常(chang)，TCO也被用(yong)来在电(dian)(dian)(dian)(dian)(dian)池的(de)(de)(de)(de)背面(mian)形成一个介(jie)电(dian)(dian)(dian)(dian)(dian)镜。因此(ci)，为了理解和优化整个a-Si:H/c-Si太阳能电(dian)(dian)(dian)(dian)(dian)池，还必须(xu)考(kao)(kao)虑(lv)TCO对电(dian)(dian)(dian)(dian)(dian)池光电(dian)(dian)(dian)(dian)(dian)性(xing)能的(de)(de)(de)(de)影(ying)响(xiang)。由(you)于其高(gao)掺(chan)杂度，TCO的(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)子行为就像(xiang)一个电(dian)(dian)(dian)(dian)(dian)荷载流子迁(qian)移率相当低的(de)(de)(de)(de)金属(shu)，而TCO/a-Si:H结(jie)的(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)子行为通(tong)常(chang)被假定(ding)为类(lei)似于金属(shu)-半导(dao)体(ti)结(jie)。 TCO的(de)(de)(de)(de)功函数对TCO/a-Si:H/c-Si结(jie)构中(zhong)的(de)(de)(de)(de)带状排列以及电(dian)(dian)(dian)(dian)(dian)荷载流子在异(yi)(yi)质(zhi)结(jie)上的(de)(de)(de)(de)传输起(qi)着重要作用(yong)。此(ci)外(wai)，TCO在大约10纳(na)米薄(bo)的(de)(de)(de)(de)a-Si:H上的(de)(de)(de)(de)沉(chen)积通(tong)常(chang)采用(yong)溅射工艺(yi)；在此(ci)，应(ying)该(gai)考(kao)(kao)虑(lv)到在该(gai)溅射工艺(yi)中(zhong)损坏脆弱的(de)(de)(de)(de)a-Si:H/c-Si界面(mian)的(de)(de)(de)(de)可能性(xing)，并且在工艺(yi)优化中(zhong)必须(xu)考(kao)(kao)虑(lv)到。杭州单(dan)晶硅异(yi)(yi)质(zhi)结(jie)设(she)备厂家

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