异(yi)(yi)(yi)质(zhi)结电(dian)(dian)池HJT是(shi)HeterojunctionTechnology的(de)(de)(de)(de)缩(suo)写，是(shi)一种N型单晶双面电(dian)(dian)池，具有工艺(yi)简单、发(fa)电(dian)(dian)量(liang)(liang)高、度(du)(du)电(dian)(dian)成本低(di)的(de)(de)(de)(de)优势。异(yi)(yi)(yi)质(zhi)结太阳(yang)(yang)能(neng)电(dian)(dian)池使用(yong)(yong)晶体硅(gui)片进(jin)(jin)行(xing)载(zai)流子传(chuan)输(shu)和吸(xi)收(shou)，并使用(yong)(yong)非晶/或微晶薄硅(gui)层(ceng)进(jin)(jin)行(xing)钝化(hua)和结的(de)(de)(de)(de)形成。顶部电(dian)(dian)极(ji)由透明导电(dian)(dian)氧化(hua)物（TCO）层(ceng)和金属网格组成。异(yi)(yi)(yi)质(zhi)结硅(gui)太阳(yang)(yang)能(neng)电(dian)(dian)池已经(jing)吸(xi)引(yin)了(le)很多人的(de)(de)(de)(de)注意，因为(wei)它们可(ke)(ke)以(yi)达到很高的(de)(de)(de)(de)转换效(xiao)率(lv)(lv)，可(ke)(ke)达26.3%，由隆基团队对HJT极(ji)限效(xiao)率(lv)(lv)进(jin)(jin)行(xing)更新(xin)为(wei)28.5%，同时使用(yong)(yong)低(di)温度(du)(du)加工，通常整(zheng)个过程低(di)于200℃。低(di)加工温度(du)(du)允(yun)许处(chu)理厚度(du)(du)小于100微米的(de)(de)(de)(de)硅(gui)晶圆，同时保持高产量(liang)(liang)。光伏异(yi)(yi)(yi)质(zhi)结在(zai)建筑、农业、交(jiao)通等领域的(de)(de)(de)(de)广(guang)泛应用(yong)(yong)，为(wei)绿色能(neng)源(yuan)的(de)(de)(de)(de)发(fa)展提(ti)供了(le)有力支持。杭州单晶硅(gui)异(yi)(yi)(yi)质(zhi)结设备厂家

异(yi)(yi)质结电(dian)(dian)(dian)(dian)池(chi)(chi)技(ji)术路线，发(fa)电(dian)(dian)(dian)(dian)量(liang)高：低温(wen)度(du)意味着(zhe)在(zai)组件高温(wen)运行环境(jing)中(zhong)，HJT电(dian)(dian)(dian)(dian)池(chi)(chi)具有相(xiang)对(dui)较高的(de)(de)发(fa)电(dian)(dian)(dian)(dian)性能，从而实现(xian)发(fa)电(dian)(dian)(dian)(dian)量(liang)增(zeng)益、降(jiang)低系统的(de)(de)度(du)电(dian)(dian)(dian)(dian)成(cheng)本；若考虑(lv)电(dian)(dian)(dian)(dian)池(chi)(chi)工作(zuo)温(wen)度(du)超出(chu)环境(jing)温(wen)度(du)10-40℃,而全年平均环境(jing)温(wen)度(du)相(xiang)比(bi)实验(yan)室标(biao)准工况低5-10℃，HJT电(dian)(dian)(dian)(dian)池(chi)(chi)每(mei)W发(fa)电(dian)(dian)(dian)(dian)量(liang)高出(chu)双(shuang)面(mian)(mian)(mian)PERC电(dian)(dian)(dian)(dian)池(chi)(chi)约0.6%-3.9%。优(you)势(shi)五：双(shuang)面(mian)(mian)(mian)率(lv)高HJT正反面(mian)(mian)(mian)结构对(dui)称，而且(qie)TCO薄(bo)膜是透光(guang)的(de)(de)，天然就是双(shuang)面(mian)(mian)(mian)电(dian)(dian)(dian)(dian)池(chi)(chi)；HJT的(de)(de)双(shuang)面(mian)(mian)(mian)率(lv)能达到90%以上(能达到98%)，双(shuang)面(mian)(mian)(mian)PERC的(de)(de)双(shuang)面(mian)(mian)(mian)率(lv)约为75%+；据solarzoom测算，考虑(lv)10%-20%的(de)(de)背面(mian)(mian)(mian)辐(fu)照及电(dian)(dian)(dian)(dian)池(chi)(chi)片(pian)双(shuang)面(mian)(mian)(mian)率(lv)的(de)(de)差异(yi)(yi)，HJT电(dian)(dian)(dian)(dian)池(chi)(chi)单(dan)(dan)瓦发(fa)电(dian)(dian)(dian)(dian)量(liang)高出(chu)双(shuang)面(mian)(mian)(mian)PERC电(dian)(dian)(dian)(dian)池(chi)(chi)约2%-4%。优(you)势(shi)六(liu)：弱光(guang)效应(ying)HJT电(dian)(dian)(dian)(dian)池(chi)(chi)采用(yong)N型(xing)单(dan)(dan)晶硅(gui)片(pian)，而PERC电(dian)(dian)(dian)(dian)池(chi)(chi)采用(yong)P型(xing)单(dan)(dan)晶硅(gui)片(pian)在(zai)600W/m以下的(de)(de)辐(fu)照强度(du)；N型(xing)相(xiang)比(bi)P型(xing)的(de)(de)发(fa)电(dian)(dian)(dian)(dian)表现(xian)高出(chu)1%-2%左(zuo)右(you)，HJT电(dian)(dian)(dian)(dian)池(chi)(chi)因弱光(guang)效应(ying)而在(zai)每(mei)W发(fa)电(dian)(dian)(dian)(dian)量(liang)上高出(chu)双(shuang)面(mian)(mian)(mian)PERC电(dian)(dian)(dian)(dian)池(chi)(chi)约0.5-1.0%左(zuo)右(you)。广州高效异(yi)(yi)质结装备光(guang)伏(fu)异(yi)(yi)质结技(ji)术的(de)(de)广泛应(ying)用(yong)能够推动(dong)光(guang)伏(fu)产业的(de)(de)创新发(fa)展(zhan)，促进(jin)科(ke)技(ji)进(jin)步和(he)经济增(zeng)长。

异质结电(dian)(dian)池(chi)(chi)（HJT电(dian)(dian)池(chi)(chi)）的(de)特点和优(you)势1、无PID现象(xiang)由于(yu)(yu)电(dian)(dian)池(chi)(chi)上(shang)表面为TCO，电(dian)(dian)荷不(bu)会在电(dian)(dian)池(chi)(chi)表面的(de)TCO上(shang)产生极化现象(xiang)，无PID现象(xiang)。同时(shi)实(shi)测(ce)数(shu)据也(ye)证实(shi)了(le)这(zhei)一(yi)点。异质结太阳(yang)能(neng)(neng)(neng)电(dian)(dian)池(chi)(chi)的(de)技术应用与前景(jing)2、低(di)(di)温(wen)(wen)(wen)制(zhi)造工艺HJT电(dian)(dian)池(chi)(chi)所有制(zhi)程(cheng)(cheng)的(de)加工温(wen)(wen)(wen)度均(jun)低(di)(di)于(yu)(yu)250，避免了(le)生产效(xiao)率低(di)(di)而(er)成本高的(de)高温(wen)(wen)(wen)扩散制(zhi)结的(de)过程(cheng)(cheng)，而(er)且(qie)低(di)(di)温(wen)(wen)(wen)工艺使得a-Si薄(bo)膜的(de)光(guang)学带隙、沉(chen)积速率、吸(xi)收(shou)系数(shu)以(yi)及氢(qing)含量得到(dao)(dao)较精(jing)确的(de)控制(zhi)，也(ye)可(ke)避免因(yin)高温(wen)(wen)(wen)导致(zhi)的(de)热(re)应力(li)等不(bu)良影响。3、高效(xiao)率HJT电(dian)(dian)池(chi)(chi)一(yi)直在刷新着(zhe)量产的(de)电(dian)(dian)池(chi)(chi)转换效(xiao)率的(de)世(shi)界(jie)纪(ji)录。HJT电(dian)(dian)池(chi)(chi)的(de)效(xiao)率比(bi)P型(xing)单晶硅电(dian)(dian)池(chi)(chi)高1-2%，而(er)且(qie)之间的(de)差异在慢慢增(zeng)大。4、高光(guang)照稳(wen)定(ding)性异质结太阳(yang)能(neng)(neng)(neng)电(dian)(dian)池(chi)(chi)的(de)技术应用与前景(jing)在HJT太阳(yang)能(neng)(neng)(neng)电(dian)(dian)池(chi)(chi)中(zhong)不(bu)会出现非晶硅太阳(yang)能(neng)(neng)(neng)电(dian)(dian)池(chi)(chi)中(zhong)常见(jian)的(de)Staebler-Wronski效(xiao)应。同时(shi)HJT电(dian)(dian)池(chi)(chi)采用的(de)N型(xing)硅片，掺(chan)杂(za)剂为磷(lin)，几(ji)乎无光(guang)致(zhi)衰减现象(xiang)。5、可(ke)向(xiang)薄(bo)型(xing)化发(fa)展HJT电(dian)(dian)池(chi)(chi)的(de)制(zhi)程(cheng)(cheng)温(wen)(wen)(wen)度低(di)(di)，上(shang)下(xia)表面结构对称(cheng)，无机械应力(li)产生，可(ke)以(yi)顺(shun)利(li)实(shi)现薄(bo)型(xing)化；另(ling)外经研究，对于(yu)(yu)少子(zi)寿命较高（SRV<100cm/s）的(de)N型(xing)硅基底，片子(zi)越薄(bo)可(ke)以(yi)得到(dao)(dao)越高的(de)开路电(dian)(dian)压。

光伏(fu)异(yi)质(zhi)(zhi)(zhi)结是(shi)太(tai)阳能电(dian)池的(de)(de)(de)主要组(zu)成(cheng)(cheng)部分(fen)，其应(ying)用(yong)前(qian)景非常广阔(kuo)。随(sui)着全球对清(qing)(qing)洁能源(yuan)的(de)(de)(de)需求不断增加，太(tai)阳能行业(ye)的(de)(de)(de)发(fa)展前(qian)景也越(yue)来越(yue)广阔(kuo)。光伏(fu)异(yi)质(zhi)(zhi)(zhi)结具(ju)有(you)高(gao)(gao)(gao)效(xiao)、环(huan)保(bao)、可再生等特点，可以(yi)广泛(fan)应(ying)用(yong)于家(jia)庭、工(gong)业(ye)、农业(ye)等领域。在家(jia)庭领域，光伏(fu)异(yi)质(zhi)(zhi)(zhi)结可以(yi)用(yong)于太(tai)阳能发(fa)电(dian)系统，为(wei)家(jia)庭提供清(qing)(qing)洁、稳(wen)定的(de)(de)(de)电(dian)力(li)供应(ying)。在工(gong)业(ye)领域，光伏(fu)异(yi)质(zhi)(zhi)(zhi)结可以(yi)用(yong)于太(tai)阳能电(dian)站，为(wei)企业(ye)提供大规模的(de)(de)(de)清(qing)(qing)洁能源(yuan)。在农业(ye)领域，光伏(fu)异(yi)质(zhi)(zhi)(zhi)结可以(yi)用(yong)于太(tai)阳能灌溉(gai)系统，为(wei)农民(min)提供便捷(jie)、高(gao)(gao)(gao)效(xiao)的(de)(de)(de)灌溉(gai)服(fu)务。此外，光伏(fu)异(yi)质(zhi)(zhi)(zhi)结还可以(yi)应(ying)用(yong)于交通、通信(xin)、航空等领域，为(wei)这些(xie)领域提供清(qing)(qing)洁、高(gao)(gao)(gao)效(xiao)的(de)(de)(de)能源(yuan)供应(ying)。因此，光伏(fu)异(yi)质(zhi)(zhi)(zhi)结在太(tai)阳能行业(ye)的(de)(de)(de)应(ying)用(yong)前(qian)景非常广阔(kuo)，具(ju)有(you)非常大的(de)(de)(de)发(fa)展潜(qian)力(li)。零界高(gao)(gao)(gao)效(xiao)异(yi)质(zhi)(zhi)(zhi)结电(dian)池整线装备，可实现更(geng)低的(de)(de)(de)度电(dian)成(cheng)(cheng)本及更(geng)好(hao)的(de)(de)(de)长期可靠性(xing)。

太(tai)(tai)阳(yang)能(neng)(neng)异质结(jie)的(de)(de)(de)(de)制(zhi)造(zao)过程是(shi)(shi)(shi)(shi)(shi)一个(ge)复杂(za)的(de)(de)(de)(de)工艺过程，需要多个(ge)步(bu)(bu)骤来(lai)完(wan)成(cheng)(cheng)(cheng)。首先，需要准备好基(ji)(ji)(ji)板(ban)(ban)，通常使(shi)(shi)用的(de)(de)(de)(de)是(shi)(shi)(shi)(shi)(shi)硅基(ji)(ji)(ji)板(ban)(ban)。然后，在(zai)基(ji)(ji)(ji)板(ban)(ban)上涂(tu)覆一层氧(yang)化(hua)硅，这一步(bu)(bu)是(shi)(shi)(shi)(shi)(shi)为了保(bao)护(hu)基(ji)(ji)(ji)板(ban)(ban)不受损(sun)伤。接着(zhe)，在(zai)氧(yang)化(hua)硅上涂(tu)覆一层掺杂(za)剂，通常使(shi)(shi)用的(de)(de)(de)(de)是(shi)(shi)(shi)(shi)(shi)磷(lin)或硼，这一步(bu)(bu)是(shi)(shi)(shi)(shi)(shi)为了形(xing)成(cheng)(cheng)(cheng)p型或n型半导体(ti)。然后，将(jiang)掺杂(za)剂加(jia)热，使(shi)(shi)其扩(kuo)散到基(ji)(ji)(ji)板(ban)(ban)中，形(xing)成(cheng)(cheng)(cheng)p-n结(jie)。接下来(lai)，需要在(zai)p-n结(jie)上涂(tu)覆一层透明导电(dian)膜，通常使(shi)(shi)用的(de)(de)(de)(de)是(shi)(shi)(shi)(shi)(shi)氧(yang)化(hua)锌或氧(yang)化(hua)铟锡。除此之外，将(jiang)太(tai)(tai)阳(yang)能(neng)(neng)电(dian)池(chi)片切割(ge)成(cheng)(cheng)(cheng)合适的(de)(de)(de)(de)大小，然后进行(xing)测(ce)(ce)试和包装。整个(ge)制(zhi)造(zao)过程需要严格的(de)(de)(de)(de)控(kong)制(zhi)温度、时(shi)间和化(hua)学物质的(de)(de)(de)(de)浓度等因素，以(yi)确(que)保(bao)太(tai)(tai)阳(yang)能(neng)(neng)电(dian)池(chi)的(de)(de)(de)(de)性(xing)能(neng)(neng)和稳定性(xing)。此外，制(zhi)造(zao)过程中还需要进行(xing)多次质量(liang)(liang)检测(ce)(ce)和测(ce)(ce)试，以(yi)确(que)保(bao)太(tai)(tai)阳(yang)能(neng)(neng)电(dian)池(chi)的(de)(de)(de)(de)质量(liang)(liang)符合标准。太(tai)(tai)阳(yang)能(neng)(neng)异质结(jie)的(de)(de)(de)(de)制(zhi)造(zao)过程是(shi)(shi)(shi)(shi)(shi)一个(ge)高技术(shu)(shu)含量(liang)(liang)的(de)(de)(de)(de)工艺过程，需要专业的(de)(de)(de)(de)技术(shu)(shu)人(ren)员和设备来(lai)完(wan)成(cheng)(cheng)(cheng)。光伏异质结(jie)作为一种重要的(de)(de)(de)(de)可(ke)再生能(neng)(neng)源技术(shu)(shu)，将(jiang)继续为推(tui)动全球能(neng)(neng)源转(zhuan)型和可(ke)持续发展(zhan)做出积极(ji)贡(gong)献(xian)。浙江0bb异质结(jie)吸杂(za)设备

异质(zhi)(zhi)结电池主(zhu)工(gong)艺之一(yi)：制绒清洗设备。杭州单晶硅(gui)异质(zhi)(zhi)结设备厂家

高效(xiao)异(yi)(yi)质结(jie)电(dian)(dian)(dian)(dian)(dian)池(chi)整线解(jie)决方(fang)案(an)，TCO的(de)(de)(de)(de)(de)(de)作(zuo)用(yong)：在(zai)(zai)形成a-Si:H/c-Si异(yi)(yi)质结(jie)后，电(dian)(dian)(dian)(dian)(dian)池(chi)被用(yong)一(yi)个(ge)~80纳米的(de)(de)(de)(de)(de)(de)透明导(dao)电(dian)(dian)(dian)(dian)(dian)氧(yang)化(hua)物接触(chu)。~80纳米薄的(de)(de)(de)(de)(de)(de)透明导(dao)电(dian)(dian)(dian)(dian)(dian)氧(yang)化(hua)物（TCO）层和前面(mian)的(de)(de)(de)(de)(de)(de)金属网格。透明导(dao)电(dian)(dian)(dian)(dian)(dian)氧(yang)化(hua)物通(tong)(tong)常是掺(chan)有Sn的(de)(de)(de)(de)(de)(de)InO（ITO）或掺(chan)有Al的(de)(de)(de)(de)(de)(de)ZnO。通(tong)(tong)常，TCO也被用(yong)来在(zai)(zai)电(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)(de)(de)背面(mian)形成一(yi)个(ge)介电(dian)(dian)(dian)(dian)(dian)镜。因此，为(wei)(wei)了理解(jie)和优化(hua)整个(ge)a-Si:H/c-Si太(tai)阳(yang)能电(dian)(dian)(dian)(dian)(dian)池(chi)，还必(bi)须考虑TCO对电(dian)(dian)(dian)(dian)(dian)池(chi)光(guang)电(dian)(dian)(dian)(dian)(dian)性(xing)能的(de)(de)(de)(de)(de)(de)影响。由于其(qi)高掺(chan)杂度(du)，TCO的(de)(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)子(zi)行(xing)为(wei)(wei)就像(xiang)一(yi)个(ge)电(dian)(dian)(dian)(dian)(dian)荷载(zai)流子(zi)迁(qian)移率相当低(di)的(de)(de)(de)(de)(de)(de)金属，而(er)TCO/a-Si:H结(jie)的(de)(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)子(zi)行(xing)为(wei)(wei)通(tong)(tong)常被假(jia)定(ding)为(wei)(wei)类似于金属-半(ban)导(dao)体结(jie)。 TCO的(de)(de)(de)(de)(de)(de)功(gong)函数对TCO/a-Si:H/c-Si结(jie)构中(zhong)的(de)(de)(de)(de)(de)(de)带(dai)状排列(lie)以及电(dian)(dian)(dian)(dian)(dian)荷载(zai)流子(zi)在(zai)(zai)异(yi)(yi)质结(jie)上(shang)的(de)(de)(de)(de)(de)(de)传输起(qi)着重要作(zuo)用(yong)。此外，TCO在(zai)(zai)大约(yue)10纳米薄的(de)(de)(de)(de)(de)(de)a-Si:H上(shang)的(de)(de)(de)(de)(de)(de)沉积通(tong)(tong)常采用(yong)溅(jian)射工艺(yi)；在(zai)(zai)此，应该考虑到在(zai)(zai)该溅(jian)射工艺(yi)中(zhong)损(sun)坏脆(cui)弱的(de)(de)(de)(de)(de)(de)a-Si:H/c-Si界面(mian)的(de)(de)(de)(de)(de)(de)可(ke)能性(xing)，并(bing)且在(zai)(zai)工艺(yi)优化(hua)中(zhong)必(bi)须考虑到。杭州单晶硅(gui)异(yi)(yi)质结(jie)设备厂家

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